The difference between EPROM and EEPROM lies in the way that the memory programs and erases. EEPROM can be programmed and erased electrically using field electron emission (more commonly known in the industry as "Fowler–Nordheim tunneling").EPROMs can't be erased electrically, and are programmed via hot carrier injection onto the floating gate. Erase is via an ultraviolet light source, although in practice many EPROMs are encapsulated in plastic that is opaque to UV light, and are "one-time programmable".Most NOR Flash memory is a hybrid style—programming is through hot carrier injection and erase is through Fowler–Nordheim tunneling.
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