The difference between EPROM and EEPROM lies in the way that the memory programs and erases. EEPROM can be programmed and erased electrically using field electron emission (more commonly known in the industry as "Fowler–Nordheim tunneling").EPROMs can't be erased electrically, and are programmed via hot carrier injection onto the floating gate. Erase is via an ultraviolet light source, although in practice many EPROMs are encapsulated in plastic that is opaque to UV light, and are "one-time programmable".Most NOR Flash memory is a hybrid style—programming is through hot carrier injection and erase is through Fowler–Nordheim tunneling.
Thursday, 25 August 2011
RELATED TYPES
Related types:-Flash memory is a later form of EEPROM. In the industry, there is a convention to reserve the term EEPROM to byte-wise erasable memories compared to block-wise erasable flash memories. EEPROM takes more die area than flash memory for the same capacity because each cell usually needs both a read, write and erase transistor, while in flash memory the erase circuits are shared by large blocks of cells (often 512×8).Newer non-volatile memory technologies such as FeRAM and MRAM are slowly replacing EEPROMs in some applications, but are expected to remain a small fraction of the EEPROM market for the foreseeable future
EEPROMs.Functions of EEPROM
There are different types of electrical interfaces to EEPROM devices. Main categories of these interface types are:
1)Serial bus 2)Parallel bus
1)Serial bus devices:-Most common serial interface types are SPI, I²C, Microwire, UNI/O, and 1-Wire. These interfaces require between 1 and 4 control signals for operation, resulting in a memory device in an 8 pin (or less) package.The serial EEPROM (or SEEPROM) typically operates in three phases: OP-Code Phase, Address Phase and Data Phase. The OP-Code is usually the first 8-bits input to the serial input pin of the EEPROM device (or with most I²C devices, is implicit); followed by 8 to 24 bits of addressing depending on the depth of the device, then data to be read or written.Each EEPROM device typically has its own set of OP-Code instructions to map to different functions. Some of the common operations on SPI EEPROM devices are:
a)Write Enable (WREN) b)Write Disable (WRDI) c)Read Status Register (RDSR) d)Write Status Register (WRSR) e)Read Data (READ) f)Write Data (WRITE)
1)Serial bus 2)Parallel bus
1)Serial bus devices:-Most common serial interface types are SPI, I²C, Microwire, UNI/O, and 1-Wire. These interfaces require between 1 and 4 control signals for operation, resulting in a memory device in an 8 pin (or less) package.The serial EEPROM (or SEEPROM) typically operates in three phases: OP-Code Phase, Address Phase and Data Phase. The OP-Code is usually the first 8-bits input to the serial input pin of the EEPROM device (or with most I²C devices, is implicit); followed by 8 to 24 bits of addressing depending on the depth of the device, then data to be read or written.Each EEPROM device typically has its own set of OP-Code instructions to map to different functions. Some of the common operations on SPI EEPROM devices are:
a)Write Enable (WREN) b)Write Disable (WRDI) c)Read Status Register (RDSR) d)Write Status Register (WRSR) e)Read Data (READ) f)Write Data (WRITE)
Other operations supported by some EEPROM devices are:-
a)Program b)Sector Erase c)Chip Erase commands2)Parallel bus devices:-Parallel EEPROM devices typically have an 8-bit data bus and an address bus wide enough to cover the complete memory. Most devices have chip select and write protect pins. Some microcontrollers also have integrated parallel EEPROM.Operation of a parallel EEPROM is simple and fast when compared to serial EEPROM, but these devices are larger due to the higher pin count (28 pins or more) and have been decreasing in popularity in favor of serial EEPROM or Flash.
History
In 1978, George Perlegos at Intel developed the Intel 2816, which was built on earlier EPROM technology, but used a thin gate oxide layer so that the chip could erase its own bits without requiring a UV source. Perlegos and others later left Intel to form Seeq Technology, which used on-device charge pumps to supply the high voltages necessary for programming
EEPROM
EEPROM (also written E2PROM and pronounced "e-e-prom," "double-e prom" or simply "e-squared") stands for Electrically Erasable Programmable Read-Only Memory and is a type of non-volatile memory used in computers and other electronic devices to store small amounts of data that must be saved when power is removed, e.g., calibration tables or device configuration.
When larger amounts of static data are to be stored (such as in USB flash drives) a specific type of EEPROM such as flash memory is more economical than traditional EEPROM devices. EEPROMs are realized as arrays of floating-gate transistors.
EEPROM is user-modifiable read-only memory (ROM) that can be erased and reprogrammed (written to) repeatedly through the application of higher than normal electrical voltage generated externally or internally in the case of modern EEPROMs. EPROM usually must be removed from the device for erasing and programming, whereas EEPROMs can be programmed and erased in circuit. Originally, EEPROMs were limited to single byte operations which made them slower, but modern EEPROMs allow multi-byte page operations. It also has a limited life - that is, the number of times it could be reprogrammed was limited to tens or hundreds of thousands of times. That limitation has been extended to a million write operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed while the computer is in use, the life of the EEPROM can be an important design consideration. It is for this reason that EEPROMs were used for configuration information, rather than random access memory.
When larger amounts of static data are to be stored (such as in USB flash drives) a specific type of EEPROM such as flash memory is more economical than traditional EEPROM devices. EEPROMs are realized as arrays of floating-gate transistors.
EEPROM is user-modifiable read-only memory (ROM) that can be erased and reprogrammed (written to) repeatedly through the application of higher than normal electrical voltage generated externally or internally in the case of modern EEPROMs. EPROM usually must be removed from the device for erasing and programming, whereas EEPROMs can be programmed and erased in circuit. Originally, EEPROMs were limited to single byte operations which made them slower, but modern EEPROMs allow multi-byte page operations. It also has a limited life - that is, the number of times it could be reprogrammed was limited to tens or hundreds of thousands of times. That limitation has been extended to a million write operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed while the computer is in use, the life of the EEPROM can be an important design consideration. It is for this reason that EEPROMs were used for configuration information, rather than random access memory.
Application
For large volumes of parts (thousands of pieces or more), mask-programmed ROMs are the lowest cost devices to produce. However, these require many weeks lead time to make, since the artwork for an IC mask layer must be altered to store data on the ROMs. Initially, it was thought that the EPROM would be too expensive for mass production use and that it would be confined to development only. It was soon found that small-volume production was economical with EPROM parts, particularly when the advantage of rapid upgrades of firmware was considered.
Some microcontrollers, from before the era of EEPROMs and flash memory, use an on-chip EPROM to store their program. Such microcontrollers include some versions of the Intel 8048, the Freescale 68HC11, and the "C" versions of the PIC microcontroller. Like EPROM chips, such microcontrollers came in windowed (expensive) versions that were useful for debugging and program development. The same chip came in (somewhat cheaper) opaque OTP packages for production. Leaving the die of such a chip exposed to light can also change behavior in unexpected ways when moving from a windowed part used for development to a non-windowed part for production.
Some microcontrollers, from before the era of EEPROMs and flash memory, use an on-chip EPROM to store their program. Such microcontrollers include some versions of the Intel 8048, the Freescale 68HC11, and the "C" versions of the PIC microcontroller. Like EPROM chips, such microcontrollers came in windowed (expensive) versions that were useful for debugging and program development. The same chip came in (somewhat cheaper) opaque OTP packages for production. Leaving the die of such a chip exposed to light can also change behavior in unexpected ways when moving from a windowed part used for development to a non-windowed part for production.
Erasure can also be accomplished with X-rays
"Erasure, however, has to be accomplished by non-electrical methods, since the gate electrode is not accessible electrically. Shining ultraviolet light on any part of an unpackaged device causes a photocurrent to flow from the floating gate back to the silicon substrate, thereby discharging the gate to its initial, uncharged condition. This method of erasure allows complete testing and correction of a complex memory array before the package is finally sealed. Once the package is sealed, information can still be erased by exposing it to X radiation in excess of 5*104 rads, a dose which is easily attained with commercial X-ray generators." (5*104 rad = 500 J/kg)[5]
"In other words, to erase your EPROM, you would first have to X-ray it and then put it in an oven at about 600 degrees Celsius (to anneal semiconductor alterations caused by the x-rays). The effects of this process on the reliability of the part would have required extensive testing so they decided on the window instead. (any temperature between 450 - 1410 °C should work).
EPROMs had a limited but large number of erase cycles; the silicon dioxide around the gates would accumulate damage from each cycle, making the chip unreliable after several thousand cycles. EPROM programming is slow compared to other forms of memory. Because higher-density parts have little exposed oxide between the layers of interconnects and gate, ultraviolet erasing becomes less practical for very large memories. Even dust inside the package can prevent some cells from being erased.
"In other words, to erase your EPROM, you would first have to X-ray it and then put it in an oven at about 600 degrees Celsius (to anneal semiconductor alterations caused by the x-rays). The effects of this process on the reliability of the part would have required extensive testing so they decided on the window instead. (any temperature between 450 - 1410 °C should work).
EPROMs had a limited but large number of erase cycles; the silicon dioxide around the gates would accumulate damage from each cycle, making the chip unreliable after several thousand cycles. EPROM programming is slow compared to other forms of memory. Because higher-density parts have little exposed oxide between the layers of interconnects and gate, ultraviolet erasing becomes less practical for very large memories. Even dust inside the package can prevent some cells from being erased.
Details
As the quartz window is expensive to make, OTP (one-time programmable) chips were introduced; here, the die is mounted in an opaque package so it cannot be erased after programming - this also eliminates the need to test the erase function, further reducing cost. OTP versions of both EPROMs and EPROM-based microcontrollers are manufactured. However, OTP EPROM (whether separate or part of a larger chip) is being increasingly replaced by EEPROM for small amounts where the cell cost isn't too important and flash for larger amounts.
A programmed EPROM retains its data for about ten to twenty years and can be read an unlimited number of times. The erasing window must be kept covered with an opaque label to prevent accidental erasure by sunlight. Old PC BIOS chips were often EPROMs, and the erasing window was often covered with a label containing the BIOS publisher's name, the BIOS revision, and a copyright notice. The practice of covering the BIOS chip with a label is still commonly seen as of today, even though current BIOS chips are actually EEPROMs or NOR flashes, with no erase windows.
Erasure of the EPROM begins to occur with wavelengths shorter than 400 nm. Exposure time for sunlight of 1 week or 3 years for room fluorescent lighting may cause erasure. The recommended erasure procedure is exposure to UV light at 253.7 nm of at least 15 W-sec/cm2 for 20 to 30 minutes, with the lamp at a distance of about 1 inch.
A programmed EPROM retains its data for about ten to twenty years and can be read an unlimited number of times. The erasing window must be kept covered with an opaque label to prevent accidental erasure by sunlight. Old PC BIOS chips were often EPROMs, and the erasing window was often covered with a label containing the BIOS publisher's name, the BIOS revision, and a copyright notice. The practice of covering the BIOS chip with a label is still commonly seen as of today, even though current BIOS chips are actually EEPROMs or NOR flashes, with no erase windows.
Erasure of the EPROM begins to occur with wavelengths shorter than 400 nm. Exposure time for sunlight of 1 week or 3 years for room fluorescent lighting may cause erasure. The recommended erasure procedure is exposure to UV light at 253.7 nm of at least 15 W-sec/cm2 for 20 to 30 minutes, with the lamp at a distance of about 1 inch.
operation
Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. Stored charge on these isolated gates changed their properties. The EPROM was invented by Dov Frohman of Intel in 1971, who was awarded US patent 3660189 in 1972.
Each storage location of an EPROM consists of a single field-effect transistor. Each field-effect transistor consists of a channel in the semiconductor body of the device. Source and drain contacts are made to regions at the end of the channel. An insulating layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited over the gate electrode. The floating gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide. A control gate electrode is deposited and further oxide covers it.
To retrieve data from the EPROM, the address represented by the values at the address pins of the EPROM is decoded and used to connect one word (usually an 8-bit byte) of storage to the output buffer amplifiers. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting.
The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor. Presence of a voltage on this gate creates a conductive channel in the transistor, switching it on. In effect, the stored charge on the floating gate allows the threshold voltage of the transistor to be programmed.
Storing data in the memory requires selecting a given address and applying a higher voltage to the transistors. This creates an avalanche discharge of electrons, which have enough energy to pass through the insulating oxide layer and accumulate on the gate electrode. When the high voltage is removed, the electrons are trapped on the electrode.Because of the high insulation value of the silicon oxide surrounding the gate, the stored charge cannot readily leak away and the data can be retained for decades.
Unlike EEPROMs, the programming process is not electrically reversible. To erase the data stored in the array of transistors, ultraviolet light is directed onto the die. Photons of the UV light create ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. Since the whole memory array is exposed, all the memory is erased at the same time. The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor fluorescent lighting over several years. [3] Generally the EPROMs must be removed from equipment to be erased, since it's not usually practical to build in a UV lamp to erase parts in-circuit.
Each storage location of an EPROM consists of a single field-effect transistor. Each field-effect transistor consists of a channel in the semiconductor body of the device. Source and drain contacts are made to regions at the end of the channel. An insulating layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited over the gate electrode. The floating gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide. A control gate electrode is deposited and further oxide covers it.
To retrieve data from the EPROM, the address represented by the values at the address pins of the EPROM is decoded and used to connect one word (usually an 8-bit byte) of storage to the output buffer amplifiers. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting.
The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor. Presence of a voltage on this gate creates a conductive channel in the transistor, switching it on. In effect, the stored charge on the floating gate allows the threshold voltage of the transistor to be programmed.
Storing data in the memory requires selecting a given address and applying a higher voltage to the transistors. This creates an avalanche discharge of electrons, which have enough energy to pass through the insulating oxide layer and accumulate on the gate electrode. When the high voltage is removed, the electrons are trapped on the electrode.Because of the high insulation value of the silicon oxide surrounding the gate, the stored charge cannot readily leak away and the data can be retained for decades.
Unlike EEPROMs, the programming process is not electrically reversible. To erase the data stored in the array of transistors, ultraviolet light is directed onto the die. Photons of the UV light create ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. Since the whole memory array is exposed, all the memory is erased at the same time. The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor fluorescent lighting over several years. [3] Generally the EPROMs must be removed from equipment to be erased, since it's not usually practical to build in a UV lamp to erase parts in-circuit.
EPROM
An EPROM (rarely EROM), or erasable programmable read only memory, is a type of memory chip that retains its data when its power supply is switched off. In other words, it is non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light from a mercury-vapor light source. EPROMs are easily recognizable by the transparent fused quartz window in the top of the package, through which the silicon chip is visible, and which permits exposure to UV light during erasing.
Backup battery
A backup battery provides power to a system when the primary source of power is unavailable. Backup batteries range from small single cells to retain clock time and date in computers, up to large battery room facilities that power uninterruptible power supply systems for large data centers. Small backup batteries may be primary cells; rechargeable backup batteries are kept charged by the prime power supply.
1)Aircraft emergency batteries:-Backup batteries in aircraft keep essential instruments and devices running in the event of an engine power failure. Each aircraft has enough power in the backup batteries to facilitate a safe landing. The batteries keeping navigation, ELUs (emergency lighting units), emergency pressure or oxygen systems running at altitude, and radio equipment operational. Larger aircraft have control surfaces that run on these backups as well. Aircraft batteries are either nickel-cadmium or valve-regulated lead acid type. The battery keeps all necessary items running for between 30 minutes and 3 hours. Large aircraft may have a ram air turbine to provide additional power during engine failures.
2)Burglar alarms:-Backup batteries are almost always used in burglar alarms. The backup battery prevents the burglar from disabling the alarm by turning off power to the building. Additionally these batteries power the remote cellular phone systems that thwart phone line snipping as well.
3)Computers:-Modern personal computer motherboards have a backup battery to run the clock circuit and retain configuation memory while the system is turned off. This is often called the CMOS battery. The original IBM AT, for example, used a small primary lithium battery to retain the clock and configuration memory. Modern systems use either primary or rechargeable batteries. Primary batteries required periodic replacement; rechargeable types often lasted as long as the system they supported.
Backup batteries are used in uninterruptible power supplies, and provide power to the computers they supply for a variable period after a power failure, usually long enough to at least allow the computer to be shut down gracefully. These batteries are often large sealed lead-acid batteries.
Server-grade disk array controllers often contain onboard cache memory, and provide an option for a "backup battery unit" (BBU) to maintain the contents of this cache after power loss. If this battery is present, disk writes can be considered completed when they reach the cache, thus speeding up I/O throughput by not waiting for the hard drive. This operation mode is called "write-back caching".
4)Hospitals:-Power failure in a hospital would result in life threatening conditions for patients. Patients undergoing surgery or on life support are reliant on a consistent power supply. Backup generators or batteries supply power to critical equipment until main power can be restored.
1)Aircraft emergency batteries:-Backup batteries in aircraft keep essential instruments and devices running in the event of an engine power failure. Each aircraft has enough power in the backup batteries to facilitate a safe landing. The batteries keeping navigation, ELUs (emergency lighting units), emergency pressure or oxygen systems running at altitude, and radio equipment operational. Larger aircraft have control surfaces that run on these backups as well. Aircraft batteries are either nickel-cadmium or valve-regulated lead acid type. The battery keeps all necessary items running for between 30 minutes and 3 hours. Large aircraft may have a ram air turbine to provide additional power during engine failures.
2)Burglar alarms:-Backup batteries are almost always used in burglar alarms. The backup battery prevents the burglar from disabling the alarm by turning off power to the building. Additionally these batteries power the remote cellular phone systems that thwart phone line snipping as well.
3)Computers:-Modern personal computer motherboards have a backup battery to run the clock circuit and retain configuation memory while the system is turned off. This is often called the CMOS battery. The original IBM AT, for example, used a small primary lithium battery to retain the clock and configuration memory. Modern systems use either primary or rechargeable batteries. Primary batteries required periodic replacement; rechargeable types often lasted as long as the system they supported.
Backup batteries are used in uninterruptible power supplies, and provide power to the computers they supply for a variable period after a power failure, usually long enough to at least allow the computer to be shut down gracefully. These batteries are often large sealed lead-acid batteries.
Server-grade disk array controllers often contain onboard cache memory, and provide an option for a "backup battery unit" (BBU) to maintain the contents of this cache after power loss. If this battery is present, disk writes can be considered completed when they reach the cache, thus speeding up I/O throughput by not waiting for the hard drive. This operation mode is called "write-back caching".
4)Hospitals:-Power failure in a hospital would result in life threatening conditions for patients. Patients undergoing surgery or on life support are reliant on a consistent power supply. Backup generators or batteries supply power to critical equipment until main power can be restored.
Resetting the CMOS settings
To access the BIOS setup when the machine fails to operate, occasionally a drastic move is required. In older computers with battery-backed RAM, removal of the battery and short circuiting the battery input terminals for a while did the job; in some more modern machines this move only resets the RTC. Some motherboards offer a CMOS-reset jumper or a reset button. In yet other cases, the EEPROM chip has to be desoldered and the data in it manually edited using a programmer. Sometimes it is enough to ground the CLK or DTA line of the I²C bus of the EEPROM at the right moment during boot, this requires some precise soldering on SMD parts. If the machine lets you boot but does not want to let you into the BIOS setup, one possible recovery is to deliberately "damage" the CMOS checksum by doing direct port writes using debug.exe, corrupting some bytes of the checksum-protected area of the CMOS RAM; at the next boot, the computer typically resets its setting to factory defaults. for example:
c:\debug -o 70 10 -o 71 aa -q
c:\debug -o 70 10 -o 71 aa -q
CMOS BATTERY
The memory and real-time clock are generally powered by a CR2032 lithium coin cell. These cells last two to ten years, depending on the type of motherboard, ambient temperature and the time that the system is powered off, while other common cell types can last significantly longer or shorter periods, such as the CR2016 which will generally last about 40% as long. Higher temperatures and longer power-off time will shorten cell life. When replacing the cell, the system time and CMOS BIOS settings may revert to default values. This may be avoided by replacing the cell with the power supply master switch on. On ATX motherboards, this will supply 3V standby power to the motherboard even if it is apparently "switched off", and keep the CMOS memory energised.
Some computer designs have used non-button cell batteries, such as the cylindrical "1/2 AA" used in the Power Mac G4 as well as some older IBM PC compatibles, or a 3-cell NiCd CMOS battery that looks like a "barrel" (common in Amigas and older IBM PC compatibles), which serves the same purpose.
Some computer designs have used non-button cell batteries, such as the cylindrical "1/2 AA" used in the Power Mac G4 as well as some older IBM PC compatibles, or a 3-cell NiCd CMOS battery that looks like a "barrel" (common in Amigas and older IBM PC compatibles), which serves the same purpose.
CMOS BATTERY
Nonvolatile BIOS memory refers to a small memory on PC motherboards that is used to store BIOS settings. It was traditionally called CMOS RAM because it used a low-power Complementary metal-oxide-semiconductor (CMOS) SRAM (such as the Motorola MC146818 or similar) powered by a small battery when system power was off. The term remains in wide use but it has grown into a misnomer: nonvolatile storage in contemporary computers is often in EEPROM or flash memory (like the BIOS code itself); the remaining usage for the battery is then to keep the real-time clock going. The typical NVRAM capacity is 512 bytes, which is generally sufficient for all BIOS settings. The CMOS RAM and the real-time clock have been integrated as a part of the southbridge chipset and it may not be a standalone chip on modern motherboard.
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